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首页> 外文期刊>Physical review >Terahertz Faraday and Kerr rotation spectroscopy of Bi_(1-x)Sb_x films in high magnetic fields up to 30 tesla
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Terahertz Faraday and Kerr rotation spectroscopy of Bi_(1-x)Sb_x films in high magnetic fields up to 30 tesla

机译:在高磁场中的Bi_(1-x)Sb_x薄膜的Terahertz Faraday和Kerr旋转光谱,高达30个特斯拉

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摘要

We report results of terahertz Faraday and Kerr rotation spectroscopy measurements on thin films of Bi1-xSbx, an alloy system that exhibits a semimetal-to-topological-insulator transition as the Sb composition x increases. By using a single-shot time-domain terahertz spectroscopy setup combined with a table-top pulsed minicoil magnet, we conducted measurements in magnetic fields up to 30 T, observing distinctly different behaviors between semimetallic (x 0.07) and topological insulator (x 0.07) samples. Faraday and Kerr rotation spectra for the semimetallic films showed a pronounced dip that blueshifted with the magnetic field, whereas spectra for the topological insulator films were positive and featureless, increasing in amplitude with increasing magnetic field and eventually saturating at high fields (20 T). Ellipticity spectra for the semimetallic films showed resonances, whereas the topological insulator films showed no detectable ellipticity. To explain these observations, we developed a theoretical model based on realistic band parameters and the Kubo formula for calculating the optical conductivity of Landau-quantized charge carriers. Our calculations quantitatively reproduced all experimental features, establishing that the Faraday and Kerr signals in the semimetallic films predominantly arise from bulk hole cyclotron resonances while the signals in the topological insulator films represent combined effects of surface carriers originating from multiple electron and hole pockets. These results demonstrate that the use of high magnetic fields in terahertz magnetopolarimetry, combined with detailed electronic structure and conductivity calculations, allows us to unambiguously identify and quantitatively determine unique contributions from different species of carriers of topological and nontopological nature in Bi1-xSbx.
机译:我们报告了在Bi1-XSBX的薄膜上报告了Terahertz法拉第和Kerr旋转光谱测量的结果,这是表现出半拓扑绝缘体转换的合金系统,因为Sb组成x增加。通过使用单次时域的Terahertz光谱设定与桌面脉冲微型磁铁进行结合,我们在磁场中进行了高达30t的测量,在半金属(x <0.07)和拓扑绝缘体之间观察到明显不同的行为(X> 0.07)样品。法拉第和克尔旋转光谱用于半金属薄膜的明显倾角显示,与磁场相比,而拓扑绝缘体膜的光谱是正且无特性的,随着磁场的增加而增加,最终饱和(> 20t) 。半金属膜的椭圆形光谱显示出共振,而拓扑绝缘体膜显示出没有可检测的椭圆形。为了解释这些观察结果,我们开发了一种基于现实频带参数的理论模型和用于计算Landau - 量化电荷载体的光学导电性的Kubo公式。我们的计算定量地再现了所有实验特征,建立了半金属膜中的法拉第和克尔信号,主要从散装孔回旋谐振中出现,而拓扑绝缘体膜中的信号代表源自多电子和孔口袋的表面载体的组合效果。这些结果表明,在太赫兹磁极测定中使用高磁场,结合详细的电子结构和电导率计算,使我们能够明确地识别和定量地确定BI1-XSBX中的拓扑和非本质性质的不同种类载体的独特贡献。

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  • 来源
    《Physical review》 |2019年第11期|115145.1-115145.15|共15页
  • 作者单位

    Rice Univ Dept Elect & Comp Engn Houston TX 77005 USA;

    Yokohama Natl Univ Grad Sch Engn Dept Phys Yokohama Kanagawa 2408501 Japan;

    Univ Texas Austin Dept Phys Austin TX 78712 USA|Univ Texas Austin Ctr Complex Quantum Syst Austin TX 78712 USA;

    Rice Univ Dept Elect & Comp Engn Houston TX 77005 USA;

    Univ Texas Austin Dept Phys Austin TX 78712 USA|Univ Texas Austin Ctr Complex Quantum Syst Austin TX 78712 USA;

    Rice Univ Dept Phys & Astron Houston TX 77005 USA;

    Rice Univ Dept Elect & Comp Engn Houston TX 77005 USA;

    Yokohama Natl Univ Grad Sch Engn Dept Phys Yokohama Kanagawa 2408501 Japan;

    Natl Inst Mat Sci Tsukuba Ibaraki 3050044 Japan;

    Natl Inst Mat Sci Tsukuba Ibaraki 3050044 Japan;

    Natl Inst Mat Sci Tsukuba Ibaraki 3050044 Japan;

    Yokohama Natl Univ Grad Sch Engn Dept Phys Yokohama Kanagawa 2408501 Japan|Natl Inst Mat Sci Tsukuba Ibaraki 3050044 Japan;

    Tohoku Univ Inst Mat Res Sendai Miyagi 9808577 Japan;

    Univ Texas Austin Dept Phys Austin TX 78712 USA|Univ Texas Austin Ctr Complex Quantum Syst Austin TX 78712 USA;

    Univ Texas Austin Dept Phys Austin TX 78712 USA|Univ Texas Austin Ctr Complex Quantum Syst Austin TX 78712 USA;

    Yokohama Natl Univ Grad Sch Engn Dept Phys Yokohama Kanagawa 2408501 Japan;

    Yokohama Natl Univ Grad Sch Engn Dept Phys Yokohama Kanagawa 2408501 Japan;

    Univ Texas Austin Dept Phys Austin TX 78712 USA|Univ Texas Austin Ctr Complex Quantum Syst Austin TX 78712 USA|Northeastern Univ Dept Phys Boston MA 02115 USA|MIT Dept Phys Cambridge MA 02139 USA;

    Rice Univ Dept Elect & Comp Engn Houston TX 77005 USA|Rice Univ Dept Phys & Astron Houston TX 77005 USA|Rice Univ Dept Mat Sci & NanoEngn Houston TX 77005 USA;

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