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Influence of minivalleys and Berry curvature on electrostatically induced quantum wires in gapped bilayer graphene

机译:微型谷和贝里曲率对带间隙双层石墨烯中静电诱导的量子线的影响

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摘要

We show that the spectrum of subbands in an electrostatically defined quantum wire in gapped bilayer graphene (BLG) directly manifests the minivalley structure and reflects Berry curvature via the associated magnetic moment of the states in the low-energy bands of this two-dimensional material. We demonstrate how these appear in degeneracies of the low-energy minibands and their valley splitting, which develops linearly in a weak magnetic field. Consequently, magnetoconductance of a ballistic point contact connecting two nongapped areas of a bilayer through a gapped (top and bottom gated) barrier would reflect such degeneracies by the heights of the first few conductance steps developing upon the increase of the doping of the BLG conduction channel (we consider an adiabatic constriction, where conductance is set by the number of propagating ballistic modes in its narrowest part): 8e(2) / h steps in a wide channel in BLG with a large gap, 4e(2) / h steps in narrow channels, all splitting into a staircase of 2e(2) / h steps upon lifting valley degeneracy by a magnetic field.
机译:我们显示,带间隙的双层石墨烯(BLG)中静电定义的量子线中的子带谱直接体现了微谷结构,并通过该二维材料的低能带中相关态的磁矩反映了贝里曲率。我们演示了它们如何出现在低能微带的简并性及其在弱磁场中线性发展的波谷分裂。因此,通过有间隙的(顶部和底部门控)势垒连接双层的两个非间隙区域的弹道点接触的磁导将通过随着BLG导电通道掺杂的增加而产生的前几个电导阶跃的高度反映这种退化。 (我们考虑绝热收缩,其中电导率由最窄部分中传播的弹道模式的数量决定):BLG中宽通道中8e(2)/ h步长,间隙较大,4e(2)/ h步长狭窄的通道,在通过磁场提升谷的简并性时,所有通道都分成2e(2)/ h的阶梯。

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