Introduction of Berry's phase and related effects has led to the study of yet another degree of freedom in electrons i.e. valley degree of freedom and a brand new branch of research, Valleytronics . This degree of freedom gives scope for a novel information carrier for electronic devices, apart from the charge and spin degree of freedom . Berry phase has given rise to various physical properties such as Berry curvature and orbital magnetic moment. Berry curvature, which can be described as a pseudo-magnetic field in the reciprocal space drives the carriers to the opposite edges of the materials according to the direction of the curvature in the presence of an in-plane electric field. This phenomenon is called Valley Hall Effect (VHE). There have been several studies on the valleytronics properties of bilayer graphene (BLG). However, the valleytronic properties of hBN-bilayer graphene heterostructure are not studied extensively. hBN is widely used as a clean and uniform dielectric layer for bilayer graphene. Thus, herein, we study the valleytronics properties of the hBN-BLG heterostructure.
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