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Competing edge structures of Sb and Bi bilayers generated by trivial and nontrivial band topologies

机译:平凡和非平凡的拓扑结构生成的Sb和Bi双层竞争边缘结构

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摘要

One-dimensional (1D) edge states formed at the boundaries of 2D normal and topological insulators have shown intriguing quantum phases such as charge density wave and quantum spin Hall effect. Based on first-principles density-functional theory calculations including spin-orbit coupling (SOC), we show that the edge states of zigzag Sb(111) and Bi(111) nanoribbons drastically change the stability of their edge structures. For zigzag Sb(111) nanoribbon, the Peierls-distorted or reconstructed edge structure is stabilized by a band-gap opening. However, for zigzag Bi(111) nanoribbons, such insulating structures are destabilized due to the presence of topologically protected gapless edge states, resulting in the stabilization of a metallic, shear-distorted edge structure. We also show that the edge states of the Bi(111) nanoribbon exhibit a larger Rashba-type spin splitting at the boundary of Brillouin zone compared to those of the Sb(111) nanoribbon. Interestingly, the spin textures of edge states in the Peierls-distorted Sb edge structure and the shear-distorted Bi edge structure have all three spin components perpendicular and parallel to the edges due to their broken mirror-plane symmetry. The present findings demonstrate that the topologically trivial and nontrivial edge states play crucial roles in determining the edge structures of normal and topological insulators.
机译:在二维法线和拓扑绝缘子的边界处形成的一维(1D)边缘状态已显示出有趣的量子相,例如电荷密度波和量子自旋霍尔效应。基于包括自旋轨道耦合(SOC)在内的第一原理密度泛函理论计算,我们显示出锯齿形Sb(111)和Bi(111)纳米带的边缘状态会极大地改变其边缘结构的稳定性。对于之字形的Sb(111)纳米带,带隙开口使Peierls扭曲或重建的边缘结构稳定。但是,对于之字形的Bi(111)纳米带,由于存在受拓扑保护的无间隙边缘状态,因此此类绝缘结构不稳定,从而导致了金属剪切变形边缘结构的稳定。我们还显示,与Sb(111)纳米带的边缘状态相比,Bi(111)纳米带的边缘状态在布里渊区的边界处表现出更大的Rashba型自旋分裂。有趣的是,在Peierls扭曲的Sb边缘结构和剪切扭曲的Bi边缘结构中,边缘状态的自旋纹理由于其破碎的镜像平面对称性而使所有三个自旋分量垂直且平行于边缘。本研究结果表明,拓扑琐碎和非琐碎的边缘状态在确定正常绝缘体和拓扑绝缘体的边缘结构中起着至关重要的作用。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2018年第7期|075402.1-075402.7|共7页
  • 作者单位

    Department of Physics, Research Institute for Natural Science and HYU-HPSTAR-CIS High Pressure Research Center, Hanyang University, 222 Wangsimni-ro, Seongdong-ku, Seoul 04763, Korea;

    Department of Physics, Research Institute for Natural Science and HYU-HPSTAR-CIS High Pressure Research Center, Hanyang University, 222 Wangsimni-ro, Seongdong-ku, Seoul 04763, Korea;

    Department of Physics, Research Institute for Natural Science and HYU-HPSTAR-CIS High Pressure Research Center, Hanyang University, 222 Wangsimni-ro, Seongdong-ku, Seoul 04763, Korea,Korea Institute for Advanced Study, 85 Hoegiro. Dongdaemun-gu, Seoul 02455, Korea;

    Peter Gruenberg Institut and Institute for Advanced Simulation, Forschungszentrum Juelich and JARA, 52425 Juelich, Germany;

    Department of Physics, Research Institute for Natural Science and HYU-HPSTAR-CIS High Pressure Research Center, Hanyang University, 222 Wangsimni-ro, Seongdong-ku, Seoul 04763, Korea;

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