首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Electronic asymmetry in self-assembled quantum dot molecules made of identical InAs/GaAs quantum dots
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Electronic asymmetry in self-assembled quantum dot molecules made of identical InAs/GaAs quantum dots

机译:由相同InAs / GaAs量子点组成的自组装量子点分子中的电子不对称性

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摘要

We show that a diatomic dot molecule made of two identical, vertically stacked, strained InAs/GaAs self-assembled dots exhibits an asymmetry in its single- and many-particle wave functions. The single particle wave function is asymmetric due to the inhomogeneous strain, while the asymmetry of the many-particle wave functions is caused by the correlation-induced localization: the lowest singlet ~1∑_g and triplet ~3∑ states show that the two electrons are each localized on different dots within the molecule; for the next singlet states ~1∑_u both electrons are localized on the same (bottom) dot for interdot separation d > 8 nm. The singlet-triplet splitting is found to be ~0.1 meV at interdot separation d=9 nm and as large as 100 meV for d= 4 nm, orders of magnitude larger than the few meV found in the large (50-100 nm) electrostatically confined dots.
机译:我们表明,由两个相同的垂直堆叠的应变InAs / GaAs自组装点组成的双原子点分子在其单粒子和多粒子波函数中显示出不对称性。由于不均匀应变,单粒子波函数是不对称的,而多粒子波函数的不对称是由相关诱导的局域性引起的:最低的单重态〜1∑_g和三重态〜3∑状态表明两个电子分别位于分子内的不同点上;对于下一个单重态〜1∑_u,两个电子都位于同一点(底部),点间距d> 8 nm。在点间距d = 9 nm时发现单重态-三重态分裂约为〜0.1 meV,在d = 4 nm时高达100 meV,比静电大的(50-100 nm)中的几个meV大几个数量级。密闭的点。

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