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Voltage-controlled high-frequency oscillations based on suspended semiconducting carbon nanotubes

机译:基于悬浮半导体碳纳米管的压控高频振荡

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A series of tunable negative differential conductance regions at room temperature is demonstrated in semiconducting carbon nanotubes suspended over a trench with a metallic gate at its bottom. The substrateless carbon nanotube is in fact a wide quantum well that experiences a series of negative differential conductance regions due to the very large difference between the effective masses in the well and the tunneling contacts. The positions of these regions can be tuned by modifying the gate voltage. Since the negative differential conductance is the key element of high-frequency oscillators, the suspended nanotube is a voltage-controlled oscillator able to work up to THz frequencies. This device could have important applications in high-frequency nanoelectronic devices and multivalued logic.
机译:室温下一系列可调的负微分电导率区域通过悬浮在沟槽底部的金属栅极的半导体碳纳米管得到了证明。实际上,无衬底碳纳米管是一个宽量子阱,由于阱中的有效质量与隧穿接触之间的巨大差异,它经历了一系列负电导率区域。这些区域的位置可以通过修改栅极电压来调整。由于负差分电导是高频振荡器的关键因素,因此悬浮的纳米管是能够工作至THz频率的压控振荡器。该器件可能在高频纳米电子器件和多值逻辑中具有重要的应用。

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