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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Electronic structure of CeRu_2X_2 (X=Si,Ge) in the paramagnetic phase studied by soft x-ray ARPES and hard x-ray photoelectron spectroscopy
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Electronic structure of CeRu_2X_2 (X=Si,Ge) in the paramagnetic phase studied by soft x-ray ARPES and hard x-ray photoelectron spectroscopy

机译:软X射线ARPES和硬X射线光电子能谱研究CeRu_2X_2(X = Si,Ge)在顺磁相中的电子结构

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摘要

Soft and hard x-ray photoelectron spectroscopy has been performed for one of the heavy fermion system CeRu_2Si_2 and a 4f-localized ferromagnet CeRu_2Ge_2 in the paramagnetic phase. The three-dimensional band structures and Fermi surface shapes of CeRu_2Si_2 have been determined by soft x-ray hv-dependent angle-resolved photoelectron spectroscopy. The differences in the Fermi surface topology and the non-4f electronic structures between CeRu_2Si_2 and CeRu_2Ge_2 are qualitatively explained by the band-structure calculation for both 4f itinerant and localized models, respectively. The Ce valences in CeRu_2X_2 (X=Si,Ge) at 20 K are quantitatively estimated by the single impurity Anderson model calculation, where the Ce 3d hard x-ray core-level PES and Ce 3d x-ray absorption spectra have shown stronger hybridization and signature for the partial 4f contribution to the conduction electrons in CeRu_2Si_2.
机译:对顺磁性相中的重费米子系统CeRu_2Si_2和4f局部铁磁体CeRu_2Ge_2进行了软,硬X射线光电子能谱分析。 CeRu_2Si_2的三维能带结构和费米表面形状已经通过软X射线hv依赖的角度分辨光电子能谱法确定。通过4f流动模型和局部模型的能带结构定性地解释了CeRu_2Si_2和CeRu_2Ge_2之间的费米表面拓扑结构和非4f电子结构的差异。通过单一杂质安德森模型计算定量估算了20 K下CeRu_2X_2(X = Si,Ge)中的Ce价,其中Ce 3d硬x射线核能级PES和Ce 3d x射线吸收光谱显示出更强的杂交和4e部分对CeRu_2Si_2中的导电电子的贡献的特征。

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