机译:高自旋极化锰矿薄膜界面处磁化的方向和厚度依赖性
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720, USA;
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Department of Materials Science and Engineering, University of California-Berkeley, Berkeley, California 94720, USA;
galvanomagnetic and other magnetotransport effects (including thermomagnetic effects); colossal magnetoresistance; magnetic properties of thin films, surfaces, and interfaces;
机译:取向和层厚度取决于溅射多层Fe / Si和Fe / Ge薄膜的纵向磁化和横向磁化磁滞回线
机译:自旋极化电流驱动的薄膜中磁化动力学对各向异性的影响
机译:对“自旋极化电流驱动的薄膜中磁化动力学对各向异性的依赖性”的修正
机译:钙钛矿锰矿薄膜中磁和磁输运性质的厚度依赖性
机译:过渡金属和半金属二氧化铬薄膜和多层膜的自旋极化输运和磁化反转行为。
机译:电阻开关器件中金属氧化物的薄膜沉积:锰矿薄膜中电阻开关的电极材料依赖性
机译:高旋纺锰薄膜界面磁化的取向和厚度依赖性