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All-optical coherently controlled terahertz ac charge currents from excitons in semiconductors

机译:半导体激子的全光相干控制太赫兹交流充电电流

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We have investigated the influence of excitonic effects on two-color coherently controlled electrical currents in semiconductors. We produce currents in CdSe and CdTe at temperature of 10 or 80 K using quantum interference between single- and two-photon absorption of fundamental and second-harmonic 150 fs optical pulses tuned over a wide energy range. Current injection is monitored via the emitted terahertz generation. For the highest photon energies wherein the injected electron-hole kinetic energy is large compared to the exciton binding energy, "dc" electrical current injection is observed and expected within the independent-particle approximation in which phase control of the current magnitude is governed by the optical phases only. However, as the photon energy decreases to the band-gap energy, features appear in the terahertz emission pattern that increasingly signal the breakdown of this model, in agreement with recent theoretical calculations that incorporate electron-hole interactions. In particular, when the excitation pulse bandwidth spans the ls-2p exciton states, the terahertz emission characteristics are consistent with a theoretically predicted ac electrical current injection in which the phase of the current-but not its amplitude-is controlled by the relative phase of the optical pulses.
机译:我们已经研究了激子效应对半导体中双色相干控制电流的影响。我们利用在宽泛的能量范围内调谐的基本和二次谐波150 fs光脉冲的单光子和双光子吸收之间的量子干扰,在10或80 K的温度下在CdSe和CdTe中产生电流。通过发射的太赫兹生成来监视电流注入。对于最高的光子能量(其中注入的电子-空穴动能比激子束缚能大),在独立粒子近似中观察到并期望“ dc”电流注入,其中电流大小的相位控制由电势控制。仅光学相位。但是,随着光子能量减小到带隙能量,太赫兹发射模式中出现的特征越来越多地表明该模型的崩溃,这与最近结合电子-空穴相互作用的理论计算相一致。特别是,当激励脉冲带宽跨越ls-2p激子状态时,太赫兹发射特性与理论上预测的ac电流注入相一致,在该注入中,电流的相位而不是其幅度由的相对相位控制。光脉冲。

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