Resonant tunneling through superconducting double barrier structures in graphene

摘要

We study resonant tunneling through a superconducting double barrier structure in graphene as a function of the system parameters. At each barrier, due to the proximity effect, an incident electron can either reflect as an electron or a hole (specular as well as retro Andreev reflection in graphene). Similarly, transport across the barriers can occur via electrons as well as via the crossed (specular and/or retro) Andreev channel, where a hole is transmitted nonlocally to the other lead. In this geometry, in the subgap regime, we find resonant suppression of Andreev reflection at certain energies due to the formation of Andreev bound levels between the two superconducting barriers, where the transmission probability T for electrons incident on the double barrier structure becomes unity. The evolution of the transport through the superconducting double barrier geometry as a function of the incident energy for various angles of incidence shows the damping of the resonance as normal reflection between the barriers increases.