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Hole spin relaxation in intrinsic and p-type bulk GaAs

机译:本征和p型体GaAs中的空穴自旋弛豫

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We investigate hole spin relaxation in intrinsic and p-type bulk GaAs from a fully microscopic kinetic spin Bloch equation approach. In contrast to the previous study on hole spin dynamics, we explicitly include the intraband coherence and the nonpolar hole-optical-phonon interaction, both of which are demonstrated to be of great importance to the hole spin relaxation. The relative contributions of the D'yakonov-Perel' and Elliott-Yafet mechanisms on hole spin relaxation are also analyzed. In our calculation, the screening constant, playing an important role in the hole spin relaxation, is treated with the random-phase approximation. In intrinsic GaAs, our result shows good agreement with the experiment data at room temperature, where the hole spin relaxation is demonstrated to be dominated by the Elliott-Yafet mechanism. We also find that the hole spin relaxation strongly depends on the temperature and predict a valley in the density dependence of the hole spin relaxation time at low temperature due to the hole-electron scattering. In p-type GaAs, we predict a peak in the spin relaxation time against the hole density at low temperature, which originates from the distinct behaviors of the screening in the degenerate and nondegenerate regimes. The competition between the screening and the momentum exchange during scattering events can also lead to a valley in the density dependence of the hole spin relaxation time in the low-density regime. At high temperature, the effect of the screening is suppressed due to the small screening constant. Moreover, we predict a nonmonotonic dependence of the hole spin relaxation time on temperature associated with the screening together with the hole-phonon scattering. Finally, we find that the D'yakonov-Perel' mechanism can markedly contribute to the hole spin relaxation in the low-density case at moderate temperature and in the high-density case at low temperature, where the Elliott-Yafet mechanism is suppressed due to the relatively weak scattering.
机译:我们从完全微观的动力学自旋Bloch方程方法研究内在和p型块状GaAs中的空穴自旋弛豫。与先前关于空穴自旋动力学的研究相比,我们明确地包括了带内相干性和非极性空穴-光子-声子相互作用,这两者都被证明对空穴自旋弛豫非常重要。还分析了D'yakonov-Perel'和Elliott-Yafet机制对空穴自旋弛豫的相对贡献。在我们的计算中,在空穴自旋弛豫中起重要作用的屏蔽常数通过随机相位近似处理。在本征砷化镓中,我们的结果与室温下的实验数据很好地吻合,在室温下,空穴自旋弛豫被证明是由Elliott-Yafet机理主导的。我们还发现,空穴自旋弛豫强烈地依赖于温度,并且由于空穴-电子散射而在低温下预测了空穴自旋弛豫时间的密度依赖性的谷。在p型GaAs中,我们预测了低温下自旋弛豫时间相对于空穴密度的峰值,这是由于在简并和非简并情况下筛选的不同行为所致。在低密度状态下,散射和散射事件期间的动量交换之间的竞争也会导致空穴自旋弛豫时间的密度依赖性下降。在高温下,由于小的筛选常数而抑制了筛选的效果。此外,我们预测了空穴自旋弛豫时间对与筛选以及空穴-声子散射有关的温度的非单调依赖性。最后,我们发现,D'yakonov-Perel'机理在中密度的低密度情况下和低温的高密度情况下可以显着促进空穴自旋弛豫,而Elliott-Yafet机理被抑制了。相对较弱的散射。

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