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机译:本征和p型体GaAs中的空穴自旋弛豫
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China;
rnHefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China;
spin relaxation and scattering; spin-orbit coupling, zeeman and stark splitting, jahn-teller effect; theories and models of many-electron systems; Ⅲ-Ⅴ semiconductors;
机译:通过数值求解完全微观动力学自旋布洛赫方程研究的P型Gaas量子线中的空穴自旋弛豫
机译:通过完全显微方法研究内在和p型GaAs量子阱中Bir-Aronov-Pikus机制引起的自旋弛豫
机译:勘误:通过完全微观方法,固有和P型Gaas量子阱中Bir-aronov-pikus机理引起的自旋弛豫[phys。 B 77,075318(2008)版]
机译:通过回旋共振光谱探测的InGaAs / GaAs量子孔中的超长孔自旋弛豫时间
机译:GaAs /(Ga,Al)As多量子阱和块状GaAs中的热电子光电导率
机译:瞬态圆二色吸收光谱法研究室温下本征GaAs量子阱中空穴的自旋弛豫动力学
机译:内部和$ p $型大块Gaas中的空穴自旋弛豫