机译:纤锌矿InN和GaN中载流子引起的折射率变化和光吸收:全频带方法
Department of Physics, Bilkent University, Ankara 06800, Turkey;
rnDepartment of Physics, Bilkent University, Ankara 06800, Turkey;
rnSchool of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ, United Kingdom;
optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); theory, models, and numerical simulation; semiconductors;
机译:InN的高压光吸收:纤锌矿相中电子密度的依赖性和岩盐InN间接带隙的重新评估
机译:激子通过分数维空间方法对纤锌矿量子阱的折射率和光吸收的影响
机译:Siδ掺杂对InAlN / GaN单量子阱中线性和非线性光学吸收及折射率变化的影响
机译:Vis-IR激光引起的聚碳酸酯-SiO_2薄膜的折射率,光学带隙和吸收边的变化
机译:纤锌矿型InN / GaN线内圆盘结构中的光学各向异性。
机译:作者更正:光吸收表现出纤锌矿型磷化镓的伪直接带隙
机译:载流子诱导的折射率变化和光学吸收 纤锌矿InN和GaN:全波段方法