机译:GaAs的电子自旋弛豫,掺杂密度接近金属到绝缘体的转变
Institute for Solid State Physics, Gottfried Wilhelm Leibniz University of Hannover, Appelstr. 2, 30167 Hannover, Germany;
Institute for Solid State Physics, Gottfried Wilhelm Leibniz University of Hannover, Appelstr. 2, 30167 Hannover, Germany;
Institute for Solid State Physics, Gottfried Wilhelm Leibniz University of Hannover, Appelstr. 2, 30167 Hannover, Germany;
Institute for Experimental and Applied Physics, Regensburg University, D-93040 Regensburg, Germany;
Institute for Solid State Physics, Gottfried Wilhelm Leibniz University of Hannover, Appelstr. 2, 30167 Hannover, Germany;
Institute for Solid State Physics, Gottfried Wilhelm Leibniz University of Hannover, Appelstr. 2, 30167 Hannover, Germany Centre for Quantum Engineering and Space-Time Research (QUEST), Hannover, Germany;
spin relaxation and scattering; noise processes and phenomena;
机译:p型GaAs:Mn中杂质密度和电子自旋弛豫时间的计算
机译:室温下自旋极化和弛豫GaAs的电子自旋极化的密度依赖性
机译:评论“室温下本征GaAs中电子自旋极化和弛豫的密度依赖性”
机译:掺杂GaAs / Algaas超晶格中的跨界过渡和电子冷却的放松动态
机译:掺ody镓镓石榴石(Gd3Ga5O12:Pr3 +)本体和纳米晶体系统中的交叉弛豫和能量转移过程
机译:GaAs / AlGaAs量子阱中自旋弛豫的温度和电子密度依赖性
机译:GaAs的电子自旋弛豫,掺杂密度接近金属到绝缘体的转变
机译:光电导闭合开口Gaas半导体开关的研究。