机译:AlGaN / GaN和AlInN / GaN超晶格中子带间吸收的比较研究:材料不均匀性的影响
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA;
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA,Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA;
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA;
Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA,School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA;
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA,Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA;
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA,Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA;
Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA,School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA;
Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York, 11973, USA;
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA,Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA,School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA,School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA;
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA;
quantum wells; Ⅱ-Ⅵ semiconductors;
机译:c平面AlInN / GaN超晶格中近红外子带间吸收的显着增强
机译:低缺陷GaN衬底上MBE生长的晶格匹配的AlInN / GaN和应变AlGaN / GaN异质结构中的近红外吸收
机译:低缺陷GaN衬底上MBE生长的晶格匹配的AlInN / GaN和应变AlGaN / GaN异质结构中的近红外吸收
机译:AlGaN / GaN与AlInN / GaN高电子迁移率晶体管的比较研究
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:Mg Delta掺杂AlGaN / GaN超晶格结构增强了P型GaN电导率
机译:alGaN / GaN和alInN / GaN超晶格中子带间吸收的比较研究:材料不均匀性的影响
机译:m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管