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Mean-field simulation of metal oxide antiferromagnetic films and multilayers

机译:金属氧化物反铁磁膜和多层膜的平均场模拟

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In this work the magnetization in antiferromagnetic thin films and multilayers with interlayer exchange coupling is simulated using mean-field approximation.Transition-metal oxide antiferromagnets are modeled as multiplane magnetic systems with 1 to 11 planes and the magnetization M is calculated as a function of temperature T.The antiferromagnetic films exhibit ferromagnetism when the number of monolayers is odd, i.e., when there is an uncompensated plane, but the net magnetization is lower than that of any single uncompensated plane due to cancellations and finite-size effects.With increasing film thickness the Neel temperature increases monotonically and the magnetic moment near the surface is reduced compared to that of the core, changing the form of the M(T) curve.When antiferromagnetic films are exchange coupled to each other, as in a multilayer with a nonmagnetic intervening layer, the surface magnetization of each film increases and the ferromagnetism of odd-numbered systems is enhanced.These results are shown to be experimentally testable by comparing magnetometry and neutron diffraction.
机译:在这项工作中,使用平均场近似模拟了具有层间交换耦合的反铁磁薄膜和多层中的磁化强度。将过渡金属氧化物反铁磁体建模为具有1至11个平面的多平面磁系统,并根据温度计算磁化强度M当单层的数量奇数时,即当存在一个未补偿的平面时,反铁磁膜会表现出铁磁性,但由于抵消和有限尺寸效应,净磁化强度低于任何一个未补偿的平面的磁化强度。与铁芯相比,尼尔温度单调增加,并且靠近表面的磁矩减小,从而改变了M(T)曲线的形式。当反铁磁膜相互交换耦合时,例如在非磁性中间层中层,每个膜的表面磁化强度增加,奇数系统的铁磁性为通过比较磁力分析法和中子衍射,这些结果被证明是实验可测试的。

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