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Dynamical optical tuning of the coherent phonon detection sensitivity in DBR-based GaAs optomechanical resonators

机译:基于DBR的GaAs光机械谐振器中相干声子检测灵敏度的动态光学调谐

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摘要

We present a detailed time-resolved differential reflectivity study of the electronic and the coherent phonon generation response of a GaAs optical microcavity after resonant picosecond laser pulse excitation. A complex behavior is observed as a function of laser-cavity-mode detuning and incident power. The observed response is explained in terms of the large dynamical variations of the optical cavity-mode frequency induced by the ultrafast laser excitation, related to the optical modulation of the GaAs-spacer index of refraction due to photoexcited carriers. It is demonstrated that this effect leads to a strong optical dynamical tuning of the coherent phonon detection sensitivity of the device.
机译:我们提出了共振皮秒激光脉冲激发后GaAs光学微腔的电子和相干声子生成响应的时间分辨差分反射率研究。观察到复杂的行为是激光腔模失谐和入射功率的函数。根据超快激光激发引起的光学腔模频率的大动态变化来解释观察到的响应,该动态变化与由于光激发载流子引起的GaAs-间隔层折射率的光学调制有关。证明了这种效应导致装置的相干声子检测灵敏度的强烈的光学动力学调谐。

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  • 来源
    《Physical review》 |2015年第7期|075307.1-075307.7|共7页
  • 作者单位

    Centro Atomico Bariloche and Instituto Balseiro, C.N.E.A., 8400 S. C. de Bariloche, R. N., Argentina;

    Centro Atomico Bariloche and Instituto Balseiro, C.N.E.A., 8400 S. C. de Bariloche, R. N., Argentina;

    Centro Atomico Bariloche and Instituto Balseiro, C.N.E.A., 8400 S. C. de Bariloche, R. N., Argentina;

    Centro Atomico Bariloche and Instituto Balseiro, C.N.E.A., 8400 S. C. de Bariloche, R. N., Argentina;

    Institut des NanoSciences de Paris, UMR 7588 C.N.R.S.-Universite Pierre et Marie Curie, 75015 Paris, France;

    Laboratoire de Photonique et de Nanostructures, C.N.R.S., 91460 Marcoussis, France;

    Laboratoire de Photonique et de Nanostructures, C.N.R.S., 91460 Marcoussis, France;

    Centro Atomico Bariloche and Instituto Balseiro, C.N.E.A., 8400 S. C. de Bariloche, R. N., Argentina;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors; multilayers; superlattices;

    机译:Ⅲ-Ⅴ和Ⅱ-Ⅵ族半导体;多层超晶格;

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