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Dynamical characteristics of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer investigated with use of terahertz spectroscopy

机译：使用Terahertz光谱研究的GaAs缓冲层中的GaAs缓冲层中的相干纵向光学声音的动态特性

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Hideo Takeuchi; Shuichi Tsuruta; Masaaki Nakayama;
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1. Emission of the terahertz electromagnetic wave from coherent longitudinal optical phonons in a GaAs buffer layer optically masked by a GaSb top epitaxial layer [J] . Hideo Takeuchi, Syuichi Tsuruta, Masaaki Nakayama Applied Physics Letters . 2011,第15期

机译：来自被GaSb顶部外延层光学掩盖的GaAs缓冲层中的相干纵向光学声子发出的太赫兹电磁波
2. Terahertz spectroscopy of dynamics of coupling between the coherent longitudinal optical phonon and plasmon in the surge current of instantaneously photogenerated carriers flowing through the /-GaAs layer of an /-GaAs-GaAs epitaxial structure [J] . Hideo Takeuchi, Syuichi Tsuruta, Masaaki Nakayama Journal of Applied Physics . 2011,第1期

机译：太赫兹光谱的瞬态光生载流子流过/ -GaAs / n-GaAs外延结构的/ -GaAs层时，相干纵向光学声子与等离子体激元之间的耦合动力学
3. Enhancement mechanism of terahertz radiation from coherent longitudinal optical phonons in undoped GaAs-type GaAs epitaxial structures [J] . Shuichi Tsuruta, Hideo Takeuchi, Hisashi Yamada, Journal of Applied Physics . 2013,第14期

机译：非掺杂GaAs / n型GaAs外延结构中相干纵向光子的太赫兹辐射增强机制
4. Dynamical Characteristics of a Coherent Longitudinal Optical Phonon in a GaAs Buffer Layer Optically Covered with a GaSb Top Epitaxial Layer Investigated with Use of Terahertz Spectroscopy [C] . Hideo Takeuchi, Shuichi Tsuruta, Masaaki Nakayama International Conference on Phonon Scattering in Condensed Matter . 2014

机译：使用Terahertz光谱研究的GaAs缓冲层中的GaAs缓冲层中的相干纵向光学声音的动态特性
5. Optical properties and electronic relaxation dynamics of monolayer-protected metal clusters studied using ultrafast pump-probe and magneto-optical spectroscopies [D] . Green, Thomas D. 2016

机译：使用超薄泵探针和磁光光谱研究单层保护金属簇的光学性质和电子弛豫动态
6. Observation of T2-like coherent optical phonons in epitaxial Ge2Sb2Te5/GaSb(001) films [O] . A. Shalini, Y. Liu, U.A.S. Al-Jarah, -1

机译：外延Ge2Sb2Te5 / GaSb（001）薄膜中类似T2的相干光子的观测
7. In-mole-fraction of InGaAs Insertion Layers Effects on the Structural and Optical Properties of GaSb Quantum Dots Grown on (001) GaAs Substrate [O] . Suwit Kiravittaya, Kamonchanok Khoklang, Supachok Thainoi, 1970

机译：InGaAs插入层的内部分数对（001）GaAs衬底生长的GASB量子点的结构和光学性质的影响
8. Optimization of Buffer Layers for InGaAs/AlGaAs PIN Optical Modulators Grown on GaAs Substrates by Molecular Beam Epitaxy [R] . Katzer, D. S. , Rabinovich, W. S. , Ikossi-Anastasiou, K. , 2000

机译：通过分子束外延在Gaas衬底上生长的InGaas / alGaas pIN光调制器的缓冲层优化

Dynamical characteristics of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer investigated with use of terahertz spectroscopy

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