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Surface phase, morphology, and charge distribution transitions on vacuum and ambient annealed SrTiO_3(100)

机译:SrTiO_3(100)在真空和环境退火下的表面相,形态和电荷分布转变

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摘要

The surface structures of SrTiO_3 (100) single crystals were examined as a function of annealing time and temperature in either oxygen atmosphere or ultrahigh vacuum (UHV) using noncontact atomic force microscopy (NC-AFM), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED). Samples were subsequently analyzed for the effect the modulation of their charge distribution had on their surface potential. It was found that the evolution of the SrTiO_3 surface roughness, stoichiometry, and reconstruction depends on the preparation scheme. LEED revealed phase transitions from a (1 × 1) termination to an intermediate c(4 × 2) reconstruction to ultimately a (√13 × √13) - R33.7° surface phase when the surface was annealed in an oxygen flux, while the reverse transition from (√13 × √13) - R33.7° to c(4 × 2) was observed when samples were annealed in UHV. When the surface reverted to c(4 × 2), AES data indicated decreases in both the surface Ti and O concentrations. These findings were corroborated by NC-AFM imaging, where initially TiO_2-terminated crystals developed half-unit cell high steps following UHV annealing, which is typically attributed to a mix of SrO and TiO_2 terminations. Surface roughness evolved nonmonotonically with UHV annealing temperature, which is explained by electrostatic modulations of the surface potential caused by increasing oxygen depletion. This was further corroborated by experiments in which the apparent roughness tracked in NC-AFM could be correlated with changes in the surface charge distribution that were controlled by applying a bias voltage to the sample. Based on these findings, it is suggested that careful selection of preparation procedures combined with application of an electric field may be used to tune the properties of thin films grown on SrTiO_3.
机译:使用非接触原子力显微镜(NC-AFM),俄歇电子能谱(AES)和低电子能谱法研究了SrTiO_3(100)单晶的表面结构在氧气气氛或超高真空(UHV)中作为退火时间和温度的函数-能量电子衍射(LEED)。随后分析样品的电荷分布调节对其表面电势的影响。发现SrTiO_3表面粗糙度,化学计量和重构的演变取决于制备方案。 LEED揭示了从表面(1×1)终止过渡到中间c(4×2)重建的相变,直至表面在氧气流中退火时最终达到(√13×√13)-R33.7°表面相。当样品在特高压中退火时,观察到从(√13×√13)-R33.7°到c(4×2)的反向转变。当表面恢复为c(4×2)时,AES数据表明表面Ti和O浓度均降低。这些发现得到了NC-AFM成像的证实,其中最初TiO_2端基的晶体在UHV退火后发展为半晶胞高阶跃迁,这通常归因于SrO和TiO_2终端的混合。表面粗糙度随UHV退火温度非单调演变,这可以解释为由氧耗竭增加引起的表面电势的静电调制。实验进一步证实了这一点,其中在NC-AFM中跟踪的表观粗糙度可能与通过向样品施加偏压来控制的表面电荷分布变化相关。根据这些发现,建议仔细选择制备步骤并结合施加电场可用于调节在SrTiO_3上生长的薄膜的性能。

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  • 来源
    《Physical review》 |2016年第19期|195303.1-195303.10|共10页
  • 作者单位

    Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06520, USA,Center for Research on Interface Structures and Phenomena (CRISP), Yale University, New Haven, Connecticut 06520, USA;

    Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06520, USA,Center for Research on Interface Structures and Phenomena (CRISP), Yale University, New Haven, Connecticut 06520, USA;

    Center for Research on Interface Structures and Phenomena (CRISP), Yale University, New Haven, Connecticut 06520, USA,Department of Applied Physics, Yale University, New Haven, Connecticut 06520, USA;

    Center for Research on Interface Structures and Phenomena (CRISP), Yale University, New Haven, Connecticut 06520, USA,Department of Applied Physics, Yale University, New Haven, Connecticut 06520, USA;

    Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06520, USA,Center for Research on Interface Structures and Phenomena (CRISP), Yale University, New Haven, Connecticut 06520, USA,Department of Applied Physics, Yale University, New Haven, Connecticut 06520, USA;

    Center for Research on Interface Structures and Phenomena (CRISP), Yale University, New Haven, Connecticut 06520, USA,Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06520, USA;

    Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06520, USA,Center for Research on Interface Structures and Phenomena (CRISP), Yale University, New Haven, Connecticut 06520, USA,Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06520, USA;

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