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REMOVAL OF BASAL PLANE DISLOCATIONS FROM SILICON CARBIDE SUBSTRATE SURFACE BY HIGH TEMPERATURE ANNEALING AND PRESERVING SURFACE MORPHOLOGY
REMOVAL OF BASAL PLANE DISLOCATIONS FROM SILICON CARBIDE SUBSTRATE SURFACE BY HIGH TEMPERATURE ANNEALING AND PRESERVING SURFACE MORPHOLOGY
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机译:高温退火和保持表面形态从碳化硅基质表面去除基底平面错位
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摘要
A method and device including adding a protective layer on the surface of a substrate, annealing the substrate at a temperature approximately greater or equal to 1850° C., removing the protective layer from the surface of the substrate after the annealing, and growing a first epilayer on the substrate after the removing of the protective layer, wherein the first epilayer is grown without attempting to prevent the basal plane dislocations to propagate in the first epilayer when growing the first epilayer, and wherein the first epilayer is free of the basal plane dislocations.
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