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机译:应变工程变质InAs / In_xGa_(1-x)As量子点的激子约束
Department of Physics, Lancaster University, Lancaster LAI 4YB, United Kingdom,Department of Physics, Abdul Wali Khan University Mardan, Mardan 23200, Pakistan;
Department of Physics, Lancaster University, Lancaster LAI 4YB, United Kingdom;
Institute for Nanoscale Physics and Chemistry (INPAC), Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium;
Institute for Nanoscale Physics and Chemistry (INPAC), Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium;
Institute for Nanoscale Physics and Chemistry (INPAC), Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium;
IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 1-43124 Parma, Italy;
IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 1-43124 Parma, Italy;
IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 1-43124 Parma, Italy;
机译:Exciton在应变工程变质INAS / IN_XGA_(1-x)中的限制为量子点
机译:菌株工程变质INAS / INXGA1-XAS量子点的激子禁闭
机译:GaAs晶片上In_xGa_(1-x)As(0.0≤x≤0.3)变质假衬底上生长的InAs量子点的应变和带间跃迁的应变效应的实验表征和理论建模
机译:基于INAS / IN_GA_(1-X)作为变形量子点的宽带光源建模
机译:在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
机译:变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究
机译:变形In_ {x} Ga_ {1-x} As中应变工程InAs量子点的激子约束