首页> 外国专利> Strain-engineered, self-assembled, semiconductor quantum dot lattices

Strain-engineered, self-assembled, semiconductor quantum dot lattices

机译:应变工程,自组装半导体量子点晶格

摘要

A method for growing strain-engineered, self-assembled, semiconductor quantum dots (QDs) into ordered lattices. The nucleation and positioning of QDs into lattices is achieved using a periodic sub-surface lattice built-up on a substrate, stressor layer, and spacer layer. The unit cell dimensions, orientation and the number of QDs in the basis are tunable. Moreover, a 2D lattice can be replicated at periodic intervals along the growth direction to form a three-dimensional (3D) lattice of QDs.
机译:一种将应变工程,自组装的半导体量子点(QD)生长为有序晶格的方法。使用在基板,应力源层和间隔层上建立的周期性次表面晶格,可以将QD形核和定位为晶格。基础中的晶胞尺寸,方向和QD数量是可调的。而且,可以沿着生长方向以周期性间隔复制2D晶格,以形成QD的三维(3D)晶格。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号