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机译:单层过渡金属二卤化物中空位缺陷的电子和光学性质
NanoScience Technology Center, Department of Physics, and College of Optics and Photonics, University of Central Florida, Orlando, Florida 32826, USA,Department of Applied Physics, Federal Urdu University of Arts, Science and Technology, Islamabad, Pakistan;
NanoScience Technology Center, Department of Physics, and College of Optics and Photonics, University of Central Florida, Orlando, Florida 32826, USA,Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA;
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Ohio 45433, USA;
NanoScience Technology Center, Department of Physics, and College of Optics and Photonics, University of Central Florida, Orlando, Florida 32826, USA;
机译:单层过渡金属二甲基化物中空位缺陷的电子和光学性质
机译:单层过渡金属二甲基化物中空位缺陷的电子和光学性质
机译:系统研究二维过渡金属二卤化金属MX_2(M = Mo,W; X = S,Se,Te)中原子尺度缺陷的结构,电子和光学性质
机译:通过系统的从头算计算研究单层过渡金属二卤化二锡(TMD)TFET中的W空位缺陷
机译:单层第VI族过渡金属硫族化物中的缺陷诱导光电响应。
机译:通过缺陷电荷调节过渡金属二卤化物的电子性能
机译:过渡金属空位缺陷的电子和光学特性 二硫属化物