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机译:系统研究二维过渡金属二卤化金属MX_2(M = Mo,W; X = S,Se,Te)中原子尺度缺陷的结构,电子和光学性质
Division of Materials Theory, Department of Physics and Astronomy, Uppsala University, Box-516, SE 75120 Sweden;
Division of Materials Theory, Department of Physics and Astronomy, Uppsala University, Box-516, SE 75120 Sweden;
Division of Materials Theory, Department of Physics and Astronomy, Uppsala University, Box-516, SE 75120 Sweden,Nepal Academy of Science and Technology, Khumaltar, Lalitpur, Nepal;
Division of Materials Theory, Department of Physics and Astronomy, Uppsala University, Box-516, SE 75120 Sweden;
Division of Materials Theory, Department of Physics and Astronomy, Uppsala University, Box-516, SE 75120 Sweden;
electronic structure of nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; electron states at surfaces and interfaces; impurity and defect levels; other semiconductors;
机译:基于过渡金属二卤化物和磷化硼的二维材料基异质结构的电子和光学性质的第一性原理研究
机译:单层和多层过渡金属二卤化金属MX_2(M = Mo,W,X = S,Se)的电子性质
机译:过渡金属二甲甲基化物单层和纳米叶片(MX_2,其中M = Cr,Mo,W和X = S,Se)的新颖性质:旋转分辨的研究
机译:通过系统的从头算计算研究单层过渡金属二卤化二锡(TMD)TFET中的W空位缺陷
机译:在高压和高温条件下,过渡金属二卤化物(TMDs)-MX2(M = Mo,W&X = S,Se)的结构和光学性质。
机译:基于过渡金属二卤化物和石墨烯状氧化锌的异质结构的电子和光学性质
机译:系统研究结构,电子和光学性质 二维过渡金属二硫化物的原子尺度缺陷mX $ _2 $(m = mo,W; X = s,se,Te)