Vacancy defect control apparatus of transition metal dichalcogenides

摘要

According to an aspect of the present invention, a two-dimensional structure of a transition metal dichalcogen compound (TMD) is filled therein and a reaction furnace providing a heated space; a gas mixing unit connected to the reactor by a pipe and injecting a mixture of carbon monoxide (CO) and carbon dioxide (CO 2 ) into the reactor; a first gas supply unit supplying carbon monoxide (CO) gas to the gas mixing unit and a second gas supply unit supplying carbon dioxide (CO 2 ) gas; an anion supply unit provided on an external side of the reactor to supply a chalcogen anion into the reactor; a product detection unit provided at the rear end of the reactor to detect the product gas discharged from the reactor; and an oxygen sensor provided at the rear end of the reactor to sense the partial pressure of oxygen.