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Defect Proliferation at the Quasicondensate Crossover of Two-Dimensional Dipolar Excitons Trapped in Coupled GaAs Quantum Wells

机译:GaAs量子阱中捕获的二维偶极激子在准缩合物交叉处的缺陷扩散

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摘要

We study ultracold dipolar excitons confined in a 10 mu m trap of a double GaAs quantum well. Based on the local density approximation, we unveil for the first time the equation of state of excitons. Specifically, in this regime and below a critical temperature of about 1 K, we show that for a local density n similar to (2 - 3) x 10(10) cm(-2) a coherent quasicondensate phase forms in the inner region of the trap, encircled by a more dilute and normal component in the outer rim. Remarkably, this spatial arrangement correlates directly with the concentration of defects in the exciton density, which is strongly decreased in the quasicondensed region, consistent with a superfluid phase. Thus, our observations point towards a Berezinskii-Kosterlitz-Thouless crossover for two-dimensional excitons.
机译:我们研究了限制在双GaAs量子阱的10微米陷阱中的超冷偶极激子。基于局部密度近似,我们首次揭示了激子的状态方程。具体来说,在这种情况下,并且在大约1 K的临界温度以下,我们显示出对于类似于(2-3)x 10(10)cm(-2)的局部密度n,在内部区域中会形成相干的准凝析物相。陷阱被外缘中更稀薄和更普通的成分所包围。显着地,这种空间排列与激子密度中的缺陷浓度直接相关,激子密度中的缺陷浓度在超密相区域中大大减小,与超流体相一致。因此,我们的观察指向二维激子的Berezinskii-Kosterlitz-Thouless交叉。

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  • 来源
    《Physical review letters》 |2019年第11期|117402.1-117402.6|共6页
  • 作者单位

    CNRS, Inst Nanosci Paris, 4 Pl Jussieu, F-75005 Paris, France|Sorbonne Univ, 4 Pl Jussieu, F-75005 Paris, France;

    CNRS, Inst Nanosci Paris, 4 Pl Jussieu, F-75005 Paris, France|Sorbonne Univ, 4 Pl Jussieu, F-75005 Paris, France;

    Univ Paris Saclay, C2N, Route Nozay, F-91460 Marcoussis, France|CNRS, Route Nozay, F-91460 Marcoussis, France;

    Univ Paris Saclay, C2N, Route Nozay, F-91460 Marcoussis, France|CNRS, Route Nozay, F-91460 Marcoussis, France;

    Univ Grenoble Alpes, CNRS, LPMMC, F-3800 Grenoble, France;

    CNRS, Inst Nanosci Paris, 4 Pl Jussieu, F-75005 Paris, France|Sorbonne Univ, 4 Pl Jussieu, F-75005 Paris, France;

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