首页> 外文期刊>Physical review letters >Quantum Light Emission of Two Lateral Tunnel-Coupled (In, Ga)As/GaAs Quantum Dots Controlled by a Tunable Static Electric Field
【24h】

Quantum Light Emission of Two Lateral Tunnel-Coupled (In, Ga)As/GaAs Quantum Dots Controlled by a Tunable Static Electric Field

机译:可调静电场控制的两个横向隧道耦合(In,Ga)As / GaAs量子点的量子发光

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Lateral quantum coupling between two self-assembled (In,Ga)As quantum dots has been observed. Photon statistics measurements between the various excitonic and biexcitonic transitions of these lateral quantum dot molecules display strong antibunching confirming the presence of coupling. Furthermore, we observe an anomalous exciton Stark shift with respect to static electric field. A simple model indicates that the lateral coupling is due to electron tunneling between the dots when the ground states are in resonance. The electron probability can then be shifted to either dot and the system can be used to create a wavelength-tunable single-photon emitter by simply applying a voltage.
机译:已经观察到两个自组装的(In,Ga)As量子点之间的横向量子耦合。这些横向量子点分子的各种激子和双激子跃迁之间的光子统计测量结果显示出很强的抗聚束能力,从而证实了偶联的存在。此外,我们观察到相对于静电场的异常激子斯塔克频移。一个简单的模型表明,横向耦合是由于当基态处于共振状态时,点之间的电子隧穿引起的。然后可以将电子概率转移到任一点,并且可以通过简单地施加电压来使用该系统创建波长可调的单光子发射器。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号