Topological-Metal to Band-Insulator Transition in (Bi_(1-x)In_x)_2Se_3 Thin Films

摘要

By combining transport and photoemission measurements on (Bi_(1-x)In_xSe_3 thin films, we report that this system transforms from a topologically nontrivial metal into a topologically trivial band insulator through three quantum phase transitions. At x ≈ 3%-7%, there is a transition from a topologically nontrivial metal to a trivial metal. At x ≈ 15%, the metal becomes a variable-range-hopping insulator. Finally, above x ≈ 25%, the system becomes a true band insulator with its resistance immeasurably large even at room temperature. This material provides a new venue to investigate topologically tunable physics and devices with seamless gating or tunneling insulators.