Time-Dependent Relaxation of Strained Silicon-on-Insulator Lines Using a Partially Coherent X-Ray Nanobeam

摘要

We report on the quantitative determination of the strain map in a strained silicon-on-insulator line with a 200 × 70 nm~2 cross section. In order to study a single line as a function of time, we used an x-ray nanobeam with relaxed coherence properties as a compromise between beam size, coherence, and intensity. We demonstrate how it is possible to refine the line deformation map at the nanoscale, and follow its evolution as the line relaxes under the influence of the x-ray nanobeam. We find that the strained line flattens itself under irradiation but maintains the same linear strain (∈_(ZZ) unchanged).