机译:超薄应变绝缘体上硅结构中的弹性松弛
London Centre for Nanotechnology, University College London, London WCIH OAH, United Kingdom;
Max Planck Institute of Microstrueture Physics, Weinherg 2, 06120 Halle (Saale), Germany;
London Centre for Nanotechnology, University College London, London WCIH OAH, United Kingdom ,Advanced Photon Source, Argonne, Illinois 60439, USA;
London Centre for Nanotechnology, University College London, London WCIH OAH, United Kingdom;
London Centre for Nanotechnology, University College London, London WCIH OAH, United Kingdom;
Advanced Photon Source, Argonne, Illinois 60439, USA;
Max Planck Institute of Microstrueture Physics, Weinherg 2, 06120 Halle (Saale), Germany;
London Centre for Nanotechnology, University College London, London WCIH OAH, United Kingdom ,Research Complex, Harwell-Oxford Campus, Didcot OX 11 ODE, United Kingdom;
机译:单个超薄应变绝缘体上硅图案化结构中面内应变的UV拉曼成像
机译:分子束外延生长超薄CDS / ZNS量子阱结构的弹性和塑性应变松弛
机译:纳米图案超薄应变绝缘体上硅的应变多波长微拉曼分析
机译:用拉曼光谱和计算机模拟研究带图案的应变绝缘体上硅结构中的应变弛豫
机译:绝缘体上硅衬底上硅锗弛豫的位错动力学。
机译:面向低电压低能耗的超薄绝缘体上硅MOSFET低频噪声行为的经验和理论模型
机译:应变半导体异质结构的HRTEM标本中的弹性应力松弛及其对图像对比的影响
机译:用塑性流动松弛亚稳半导体应变层结构