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首页> 外文期刊>Physical review letters >Dissociative Chemisorption of O_2 Inducing Stress Corrosion Cracking in Silicon Crystals
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Dissociative Chemisorption of O_2 Inducing Stress Corrosion Cracking in Silicon Crystals

机译:O_2的解离化学吸附诱导硅晶体中的应力腐蚀开裂

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摘要

Fracture experiments to evaluate the cleavage energy of the (110)[110] and (111)[112] cleavage systems in silicon at room temperature and humidity give 2.7 ± 0.3 and 2.2 ± 0.2 J/m~2, respectively, lower than any previous measurement and inconsistent with density functional theory (DFT) surface energy calculations of 3.46 and 2.88 J/m~2. However, in an inert gas environment, we measure values of 3.5 ± 0.2 and 2.9 ± 0.2 J/m~2, consistent with DFT, that suggest a previously undetected stress corrosion cracking scenario for Si crack initiation in room conditions. This is fully confirmed by hybrid quantum-mechanics-molecular-mechanics calculations.
机译:在室温和湿度下评估(110)[110]和(111)[112]裂解系统在硅中的裂解能的断裂实验分别给出了2.7±0.3和2.2±0.2 J / m〜2的能量,比任何一个都要低先前的测量结果与3.46和2.88 J / m〜2的密度泛函理论(DFT)表面能计算不一致。然而,在惰性气体环境中,我们测得的值分别为3.5±0.2和2.9±0.2 J / m〜2,与DFT一致,这表明以前在室温下未检测到的Si裂纹萌生的应力腐蚀开裂情况。混合量子力学-分子力学计算已充分证实了这一点。

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