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机译:O_2的解离化学吸附诱导硅晶体中的应力腐蚀开裂
Department of Materials Science and Engineering, Technion, Haifa 32000, Israel;
Department of Physics, King's College London, Strand, London WC2R 2LS, United Kingdom;
Department of Physics, King's College London, Strand, London WC2R 2LS, United Kingdom;
Department of Physics, King's College London, Strand, London WC2R 2LS, United Kingdom ,CENMAT-UTS, Via Alfonso Valerio 2, 34127 Trieste, Italy;
Department of Materials Science and Engineering, Technion, Haifa 32000, Israel;
density functional theory, local density approximation, gradient and other corrections; molecular dynamics calculations (car-parrinello) and other numerical simulations;
机译:硅晶体动态应力腐蚀裂纹
机译:在照射和非照射锆合金中形成的碘诱导应力腐蚀裂纹尖端的高分辨率晶体表征
机译:高强度钢的氢致开裂和应力腐蚀开裂的阈值应力强度
机译:氧化膜裂纹长度对应力腐蚀裂纹尖端膜诱导应力的影响
机译:超声分子束研究IV族氢化物在单晶硅和锗上的解离化学吸附。
机译:腐蚀产物膜引起的应力促进应力腐蚀开裂
机译:O2的解离化学吸附导致硅晶体中的应力腐蚀开裂