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Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor

机译:硅金属氧化物半导体场效应晶体管中的空穴自旋共振和自旋轨道耦合

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摘要

We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the subthreshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra agree with a model of strongly coupled two-spin states in the presence of a spin-orbit-induced anticrossing. Detailed spectroscopy at the anticrossing shows a suppressed spin resonance signal due to spin-orbit-induced quantum state mixing. This suppression is also observed for multiphoton spin resonances. Our experimental observations agree with theoretical calculations.
机译:我们研究p沟道硅金属氧化物半导体场效应晶体管中的空穴自旋共振。在亚阈值区域中,测得的源极-漏极电流在通道中显示出一个双点。观察到的自旋共振谱与存在自旋轨道诱导的反交叉的强耦合双自旋态模型相吻合。由于自旋轨道诱导的量子态混合,抗交叉的详细光谱显示抑制了自旋共振信号。对于多光子自旋共振也观察到这种抑制。我们的实验观察结果与理论计算相符。

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  • 来源
    《Physical review letters》 |2017年第15期|156802.1-156802.6|共6页
  • 作者单位

    RIKEN, Adv Device Lab, Wako, Saitama 3510198, Japan;

    RIKEN, CEMS, Wako, Saitama 3510198, Japan;

    Toshiba Co Ltd, Corporate R&D Ctr, Kawasaki, Kanagawa 2128582, Japan;

    Toshiba Co Ltd, Corporate R&D Ctr, Kawasaki, Kanagawa 2128582, Japan;

    RIKEN, CEMS, Wako, Saitama 3510198, Japan|Univ Buffalo SUNY, Dept Phys, Buffalo, NY 14260 USA;

    RIKEN, CEMS, Wako, Saitama 3510198, Japan|Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA;

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