Atomic Layer Deposition of AlN on Graphene

摘要

Graphene is a material with great promise for several applications within electronics.However, using graphene in any such application requires its integrationin a stack of thin layers of materials. The ideal structure of graphene has a fullysaturated surface without any binding sites for chemisorption of growth species,making film growth on graphene highly challenging. Herein, an attempt todeposit very thin layers of AlN using an atomic layer deposition approach isreported. It is demonstrated using X-ray photoelectron spectroscopy that Al–Nare formed in the films deposited on graphene and shown by scanning electronmicroscopy and atomic force microscopy that the films have an island morphology.These results may be considered promising toward the development ofa growth protocol for AlN on graphene and possibly also for 2D AlN fabrication.