First Demonstration of a High-Speed and High-Power-Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding

摘要

A novel high-speed photodiode (PD) with an InGaAs/Si structure fabricated byatomic-diffusion bonding (ADB) is proposed with the aim of improving the heattransfer. The fabricated PD shows a responsivity of 0.42 AW~(-1) and a 3 dBbandwidth of over 50 GHz. The maximum damage-threshold photocurrent, orhigh-power tolerance, is higher than that of a conventional PD on an InP substrate,thanks to the high thermal conductivity of Si used as the collector in the PD.