InP-DHBT Fabricated on High Heat Dissipation SiC Wafer Using Atomic Diffusion Bonding

摘要

The drastic increase in internet traffic has created the demand for ultra-high speed optical fiber communication systems that can transmit at a speed of over 400 Gbit/s. InP-based double heterojunction bipolar transistors (InP-DHBTs) with a high-speed transmission capability and high breakdown voltage are suitable for integrated circuits (ICs) that drive the semiconductor lasers or optical modulators in these fiber communication systems. In general, InP-DHBTs must be driven under a high current density for high baud rate operation. However, such severe operating conditions eventually accelerate the degradation of InP-DHBT characteristics because of self-heating, leading to shorter life of ICs. This paper introduces our trials to fabricate InP-DHBTs on a SiC wafer with high heat dissipation. Atomic diffusion bonding, which allows metal-metal bonding under room temperature and low pressure conditions, is used to fabricate the InP-DHBTs on a SiC wafer. The fabricated device reduces thermal resistance by more than 40% owing to the high heat dissipation of the SiC wafer.