Buried-Tunnel Junction Current Injection for InP-Based Nanomembrane Photonic Crystal Surface Emitting Lasers on Silicon

摘要

Herein, the design, metal-organic vapor-phase epitaxial growth, fabrication, andcharacterization of buried-tunnel junction (BTJ) current injection structures forInP/Si hybrid nanomembrane photonic crystal surface emitting lasers (PCSELs)are reported. Corresponding BTJ-light-emitting diodes on InP substrate show lowseries resistance and uniform carrier injection over square-shaped device areaswith side length ranging from 15 up to 250 μm, whereas BTJ-PCSEL structureswith similar current injection configuration fabricated on photonic-crystal siliconon-insulator substrate using transfer print technology show significant linewidthnarrowing at low current density.