首页> 外国专利> PHOTONIC CRYSTAL LASER, METHOD OF MANUFACTURING PHOTONIC CRYSTAL LASER, SURFACE EMITTING LASER ARRAY, LIGHT TRANSMISSION SYSTEM, AND WRITING SYSTEM

PHOTONIC CRYSTAL LASER, METHOD OF MANUFACTURING PHOTONIC CRYSTAL LASER, SURFACE EMITTING LASER ARRAY, LIGHT TRANSMISSION SYSTEM, AND WRITING SYSTEM

机译:光子晶体激光器,光子晶体激光器的制造方法,表面发射激光阵列,光传输系统和写入系统

摘要

PROBLEM TO BE SOLVED: To provide a photonic crystal laser which has a photonic crystal period structure where refractive indexes are two-dimensionally, periodically located near an active layer emitting by injection of carriers and resonates with the photonic crystal to surface-emit; a method of manufacturing the photonic crystal; a surface-emitting laser array; a light transmission system; and a writing system.;SOLUTION: Because almost all the carriers pass through positions apart from holes of a low refractive index due to an effect of a current passage limiting layer which is composed of a high resistance area and conductive area located near the two-dimensional photonic crystal structure provided with a low-refractive index in a semiconductor layer, the proportion of the carriers reached a side wall to the carrier passing through the two-dimensional photonic crystal structure becomes small, thereby, the non-emitting recombination on the side wall of the hole of low refractive index is reduced. By preventing the non-emitting recombination, the leakage of current is inhibited, and the laser light can be resonated with a low threshold current.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种具有光子晶体周期结构的光子晶体激光器,该光子晶体周期结构是二维的,周期性地位于通过注入载流子而发射并与光子晶体共振以进行表面发射的有源层附近。光子晶体的制造方法;表面发射激光器阵列;透光系统;解决方案:由于电流通道限制层的作用,几乎所有的载流子都通过了低折射率孔以外的位置,该电流限制层由高电阻区和位于两层附近的导电区组成。在半导体层中具有低折射率的二维光子晶体结构,到达侧壁的载流子相对于通过二维光子晶体结构的载流子的比例变小,从而侧面的非发光复合低折射率的孔壁减小。通过防止不发光复合,可以抑制电流泄漏,并且可以以低阈值电流使激光谐振。;版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006156944A

    专利类型

  • 公开/公告日2006-06-15

    原文格式PDF

  • 申请/专利权人 RICOH CO LTD;

    申请/专利号JP20050192390

  • 发明设计人 ITO AKIHIRO;SATO SHUNICHI;

    申请日2005-06-30

  • 分类号H01S5/183;

  • 国家 JP

  • 入库时间 2022-08-21 21:55:46

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