The Effect of Annealing Pressure on Perovskite Films and Its Thin-Film Field-Effect Transistors’ Performance

摘要

The effect of annealing pressure on the properties of organic-inorganic hybrid perovskite is investigated. A novel and facile low-pressure annealing strategy is proposed to obtain high-quality perovskite films with full coverage, micrometer-sized grains, and small roughness. Herein, it is found that a low-pressure annealing environment is favorable for the volatilization of the residual solvent in the initial film to further improve the nucleation rate of the perovskite. The grain size has a great correlation with the annealing pressure and time. As a result, the thin-film field-effect transistors fabricated by this optimized film exhibit a relatively high field-effect mobility of 1.8 x 10(-2) cm(2) Vs(-1). Herein, it is significant that fabricating high-quality perovskite films by the solution process in air is made possible.