Structural and light-emission modification in chemically-etched porous silicon

摘要

After electrochemical etching, we have made a study of the effects generated on p~+-type porous silicon layers when they are left in presence of the electrolyte for different post-etching times. Using an interfer-ometric technique, we have monitored the change of its porosity during the post-etch process due to a chemical dissolution mechanism. These data are complemented with a study of photoluminescence and transmission electron microscopy measurements for different post-etching times.