Structural and optical characterization of indium and gallium indium sulfide films prepared by modulated flux deposition

摘要

Indium and gallium indium sulfide thin films were deposited on soda-lime glass substrates at 350 ℃, in a wide range of sulfur delivery conditions, by Modulated Flux Deposition (MFD). Indium sulfide films were highly crystalline β-In_2S_3 (tetragonal) with E_g = 2.68 eV. Depending on the availability of sulfur, gallium indium-poor sulfide films consisted on metal-rich hexagonal P-GaS layers or stoichiometric amorphous films with E_g = 3.0-3.3 eV. Finally, gallium indium-rich sulfide films fanned a mixture of β-In_2S_3 and β-GaS that became near amorphous as more sulfur was supplied; a bandgap energy of E_g = 2.44 eV was found.