Innovative process flow to achieve carbon nanotube based interconnects

摘要

We have achieved down to 140 nm diameter carbon nanotube via interconnects with both new single and dual damascene processes on 200 mm silicon wafers. High density 5 × 10~(10) nanotube/cm~2 is obtained. The validity of these two new processes has been checked by performing electrical measurements. At high bias, a low resistance of 20 Ω has been reached for a 300 nm diameter via interconnect.