Monte Carlo studies of low-field electron transport in monolayer silicene and graphene

摘要

Electron mobility and diffusion coefficients in monolayer silicene and graphene are calculated by Monte Carlo simulations using a simplified band structure with linear energy bands. Temperature evolution of the low-field mobility and diffusion coefficients is presented. Calculated characteristics of the low-field mobility in silicene exhibit a 1/T~3 dependence for nondegenerate electron gas conditions, which is attributed to dominant acoustic phonon scattering and to the linear band structure of the material. In degenerate conditions, a 1/T dependence is found in silicene. In graphene. there is no such simple power relation since optical and acoustic phonon scattering have comparable inlluences on electron transport. It is also found that electron-clectron scattering only slightly modifies the low-field electron mobility in a degenerate electron gas.