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首页> 外文期刊>Physica status solidi >Impact of transparent conductive oxide front side texture on the open-circuit voltage of a-Si:H solar cells
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Impact of transparent conductive oxide front side texture on the open-circuit voltage of a-Si:H solar cells

机译:透明导电氧化物正面纹理对a-Si:H太阳能电池开路电压的影响

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摘要

High efficiency thin-film silicon solar cells require texturing of the front contacts for advanced light management. However, optically favorable textures may be challenging in terms of the electrical performance. Solar cells deposited on very rough front contacts show a reduced open-circuit voltage, V_(oc), as compared to flat TCOs. This contribution focuses on the impact of rough surfaces on the V_(oc) in a-Si:H solar cells deposited on six different textured front TCOs. With various i- layer thicknesses from 100 to 400 nm the origin of the V_(oc) loss is investigated. Based on our results we propose that the reduction of V_(oc) in a-Si:H solar cells are mainly due to defective regions in the bulk material induced by very rough textures. It is also seen that enlarging the i-layer thickness can improve the V_(oc) of solar cells when grown on very rough textures. By using variable illumination intensity measurements the existence of shunts could be evidenced.
机译:高效薄膜硅太阳能电池需要对前触点进行纹理化处理,以实现高级光管理。然而,就电性能而言,光学上有利的纹理可能具有挑战性。与平坦的TCO相比,沉积在非常粗糙的前触点上的太阳能电池的开路电压V_(oc)降低。该贡献集中在沉积在六个不同纹理化前TCO上的a-Si:H太阳能电池中,粗糙表面对V_(oc)的影响。在100到400 nm的各种i层厚度下,研究了V_(oc)损耗的起源。根据我们的结果,我们认为a-Si:H太阳能电池中V_(oc)的降低主要是由于非常粗糙的纹理导致的块状材料中的缺陷区域。还可以看到,当在非常粗糙的纹理上生长时,增大i层厚度可以提高太阳能电池的V_(oc)。通过使用可变的照明强度测量,可以证明存在分流器。

著录项

  • 来源
    《Physica status solidi》 |2016年第7期|1942-1948|共7页
  • 作者单位

    IEK5 - Photovoltaik, Forschungszcntrum Juelich GmbH, Wilhelm-Johnen-Strasse, 52425 Juelich, Germany;

    IEK5 - Photovoltaik, Forschungszcntrum Juelich GmbH, Wilhelm-Johnen-Strasse, 52425 Juelich, Germany;

    IEK5 - Photovoltaik, Forschungszcntrum Juelich GmbH, Wilhelm-Johnen-Strasse, 52425 Juelich, Germany;

    IEK5 - Photovoltaik, Forschungszcntrum Juelich GmbH, Wilhelm-Johnen-Strasse, 52425 Juelich, Germany;

    IEK5 - Photovoltaik, Forschungszcntrum Juelich GmbH, Wilhelm-Johnen-Strasse, 52425 Juelich, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    a-Si:H; front texture; open-circuit voltage; TCO; thin-film silicon;

    机译:a-Si:H;正面纹理;开路电压;TCO;薄膜硅;

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