首页> 外国专利> HIGHLY-CONDUCTIVE AND TEXTURED FRONT TRANSPARENT ELELCTRODE FOR A-SI THIN-FILM SOLAR CELLS, AND/OR METHOD OF MAKING THE SAME

HIGHLY-CONDUCTIVE AND TEXTURED FRONT TRANSPARENT ELELCTRODE FOR A-SI THIN-FILM SOLAR CELLS, AND/OR METHOD OF MAKING THE SAME

机译:用于A-SI薄膜太阳能电池的高导电性和纹理化的透明前电极,和/或制造方法相同的方法

摘要

Certain example embodiments incorporate a 'hybrid' design for the front electrode of solar cells, which advantageously combines naturally textured pyrblytic tin oxide and highly-conductive sputtered indium tin oxide (ITO). In certain example embodiments of this invention, a method of making a front ele6bode superstrate for a solar cell is provided. A glass substrate is provided. A lay& of tin oxide is pyrolytically deposited on the glass substrate, with the layer of tin oxide being textured as a result of the pyrolytic deposition and with the layer of tin oxide being haze producing. A layer of indium tin oxide (ITO) is spytter-deposited on the layer of tin oxide, with the layer of IT0 being generally co$ormal with respect to the layer of tin oxide. An amorphous silicon (a-Si) thin f-layer stack is formed on the layer of IT0 in making the front electrode 2' suserstrate.
机译:某些示例实施例结合了用于太阳能电池的前电极的“混合”设计,该设计有利地结合了自然织构的热解氧化锡和高导电性溅射铟锡氧化物(ITO)。在本发明的某些示例实施例中,提供了一种制造用于太阳能电池的前电极覆板的方法。提供了一种玻璃基板。一氧化锡层被热解沉积在玻璃基板上,由于热解沉积,氧化锡层被纹理化,并且氧化锡层被雾化。氧化铟锡(ITO)层被溅射沉积在氧化锡层上,其中IT0层通常相对于氧化锡层是共模的。在IT0层上形成非晶硅(a-Si)薄f层堆叠,以使前电极2'成为基板。

著录项

  • 公开/公告号IN5139DEN2012A

    专利类型

  • 公开/公告日2015-10-23

    原文格式PDF

  • 申请/专利权人 GUARDIAN INDUSTRIES CORP.;

    申请/专利号IN2012DELNP5139

  • 发明设计人 KRASNOV ALEXEY;DEN BOER WILLEM;

    申请日2012-06-11

  • 分类号H01L31/18;

  • 国家 IN

  • 入库时间 2022-08-21 15:14:12

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