High transparency low resistance oxidized Ni/Au-ZnO contacts to p-GaN for high performance LED applications

摘要

This paper presents high-transparency low-resistance contact on p-GaN using oxidized Ni/Au-ZnO:Al_2O_3(2 wt%) for high-performance GaN-based light-emitting diodes (LEDs) applications. It is shown that oxidized Ni/Au-ZnO contact to p-GaN yields an operating voltage of around 4.7 V at 20 mA compared to 4.1 V of a reference oxidized Ni/Au(5 nm/5 nm)-Ni/Au(20 nm/120 nm) sample without the ZnO: Al_2O_3(2 wt%) layer. Enhancement of transmittance of about 60% at the wavelength of 450 nm over a conventional N_2-annealed semi-transparent Ni/Au(5 nm/5 nm) contact is measured on glass substrates.