Effect of the nitridation process on cubic GaN film quality grown on AlGaAs buffer layer by RF-MBE

摘要

The effects of the nitridation process on cubic GaN film quality grown on AlGaAs buffer layer by plasma assisted molecular beam epitaxy were investigated. When 10 seconds of nitridation was applied on AlGaAs buffer layer, the surface became very smooth by the suppression of {111} facet formation. The re-producibility and stability of high purity cubic GaN epilayer growth was dramatically improved by reducing the nitridation time. Dominant cubic GaN epilayer (0.8 μm) growth was confirmed by in situ RHEED observation, AFM, PL and X-ray diffraction measurements.