InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: shape, anisotropy and formation process

A. Michon; G. Patriarche; I. Sagnes; G. Beaudoin; G. Saint-Girons

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InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: shape, anisotropy and formation process

机译：MOVPE生长的InAs / InP（001）量子点和量子棒：形状，各向异性和形成过程

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This contribution presents a thermodynamical analysis of the formation process of InAs/InP(001) quantum dots (QDs) or quantum sticks (QSs) grown by metalorganic vapor phase epitaxy. This study, based on an analytical model of Tersoff et al. adapted to our QD geometry, describes the origin of QD shape anisotropy and size dispersion. It also explains the shape transition from QDs to QSs under As-poor growth conditions.

机译：该贡献提出了对由金属有机气相外延生长的InAs / InP（001）量子点（QDs）或量子棒（QSs）形成过程的热力学分析。这项研究基于Tersoff等人的分析模型。适应我们的QD几何形状，描述了QD形状各向异性和尺寸分散的起源。它还解释了在贫乏条件下从QD到QS的形状转变。

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来源
《Physica Status Solidi. C, Conferences and critical reviews》 |2006年第11期|p.3928-3931|共4页
作者
A. Michon; G. Patriarche; I. Sagnes; G. Beaudoin; G. Saint-Girons;
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作者单位

Laboratoire de Photonique et de Nanostructures, CNRS-UPR20, route de Nozay, 91460 Marcoussis, France;

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原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
surface thermodynamics, surface energies; quantum dots; quantum wires; Ⅲ-Ⅴ semiconductors; theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; chemical vapor deposition (including plasma-enhanced CVD, MOC;

机译：表面热力学;表面能;量子点;量子线;Ⅲ-Ⅴ族半导体;晶体生长的理论和模型;晶体生长的物理学;晶体形态和取向;化学气相沉积（包括等离子体增强CVD;MOC）;

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专利

1. Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy [J] . G. Saint-Girons, A. Michon, I. Sagnes, Surface Science . 2007,第13期

机译：金属有机气相外延生长InAs / InP（001）量子点和量子棒的形状，各向异性和形成过程的热力学分析
2. Effect of thin GaAs tensile-strained layer on InAs quantum dots on InP (001) substrate grown by LP-MOVPE [J] . Zhi Jin, Shuren Yang, Bingbing Liu Optical Materials . 2000,第3期

机译：薄GaAs拉伸应变层对LP-MOVPE生长的InP（001）衬底上InAs量子点的影响
3. Initial stage of the overgrowth of InP on InAs/InP(001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edges [J] . G. Saint-Girons, G. Patriarche, A. Michon, Applied Physics Letters . 2006,第3期

机译：InAs / InP（001）量子点上InP过度生长的初始阶段：量子点边缘上的优先成核驱动InP台阶的形成
4. InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: Shape, anisotropy and formation process [C] . G. Saint-Girons, A. Michon, I. Sagnes, International Conference on the Physics of Semiconductors . 2007

机译：INAS / INP（001）由MOVPE种植的量子点和量子棒：形状，各向异性和形成过程
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

机译：在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
6. Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography [O] . Paweł Holewa, Jakub Jasiński, Artem Shikin, 2021

机译：站点选择性地生长INAS / INP量子点的光学性质具有通过嵌段共聚物光刻预定定位的预定定位
7. Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy [O] . Fuster, David, Rivera de Mena, Antonio, Alén, Benito, 2009

机译：固体源分子束外延直接形成在InP（001）上生长的InAs量子点
8. InAs Self-Organized Quantum Dots Grown by MOVPE in In0.53Ga0.7As Matrix. [R] . Kovalenkov, O. V., Tarasov, I. S., Vinokurov, D. A., 1998

机译：mOVpE在In0.53Ga0.7as矩阵中生长Inas自组织量子点。

InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: shape, anisotropy and formation process

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