Preparation of ternary Cd_(1-x)Zn_xS alloy by photochemical deposition (PCD) and its application to photovoltaic devices

摘要

p-SnS-Cd_(1-x)Zn_xS heterojunctions were fabricated by using pulsed electrochemical deposition (P-ECD) and photochemical deposition (PCD) methods. CdSO_4, ZnSO_4 and Na_2S_2O_3 were used for the deposition of Cd_(1-x)Zn_xS alloys by PCD method on the indium-tin-oxide (ITO) coated glass substrates. The x values in the Cd_(1-x)Zn_xS were varied by changing the Na_2S_2O_3 concentration in the deposition bath. SnS layer was deposited by P-ECD using SnSO_4 and Na_2S_2O_3. The composition details of the n-Cd_(1-x)Zn_xS window layer were estimated from LO (longitudinal optical) phonon frequency observed from the Raman studies. The photovoltaic properties of the fabricated solar cell structure glass/ITO/ Cd_(1-x)Zn_xS /SnS/In are characterised under the photon intensity 100 mW/cm~2 and we observed the short circuit current density as 4.8 mA/cm~2, open circuit voltage as 280 mV and fill factor as 0.34.