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机译:在GaAs衬底上的转移激光二极管上形成具有劈开面的氮化物激光腔
Department of Electrophysics, Microelectronics and Information Systems Research Center, Na Hsinchu, Taiwan, ROC National Nano Device Laboratories, No. 26 Prosperity Road 1, Hsinchu, Taiwan 30078, ROC;
Department of Electrophysics, Microelectronics and Information Systems Research Center, Na Hsinchu, Taiwan, ROC;
Department of Electrophysics, Microelectronics and Information Systems Research Center, Na Hsinchu, Taiwan, ROC;
Department of Electrophysics, Microelectronics and Information Systems Research Center, Na Hsinchu, Taiwan, ROC;
Department of Electrophysics, Microelectronics and Information Systems Research Center, Na Hsinchu, Taiwan, ROC;
semiconductor lasers; laser diodes; Ⅲ-Ⅴ semiconductors; chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.);
机译:在独立式GaN衬底上生长的Ⅲ型氮化物激光二极管中分裂面的原子力显微镜分析
机译:在室温下,切割面氮化物二极管激光器在410 nm处产生160 mW
机译:切割和蚀刻的刻面氮化物激光二极管
机译:在GaAs基材上的转移激光二极管上形成氮化物激光腔的形成
机译:刻面三族氮化物激光器。
机译:选择性转移发光二极管到a上柔性基板通过激光Lissajous扫描
机译:高连续波输出功率InGaas / InGaasp / InGap二极管激光器:衬底误取向的影响
机译:单片Gaas / si衬底上的Gaas / alGaas二极管激光器