On triple dislocation nodes observed by TEM in a Ge_0.4Si_0.6 film grown on a slightly deviating (0 0 1)Si substrate

摘要

Specific misfit dislocation configurations are observed by two-beam dark-field transmission electron microscopy in a system formed by a Ge_0.4Si_0.6 ultrathin film grown on a (0 0 1)Si surface tilted 6° around a axis. An unusual interfacial feature is the presence of triple dislocation nodes linked to ‘Y-centres’ formed by the meeting of two near-60° dislocations and a slightly inclined edge misfit dislocation. It is shown, from the comparison of experimental and computer-aided images, requiring three-dimensional elastic fields of angular dislocations, that some Lomer misfit dislocation terminations are not simply the emerging points of a single dislocation, but very probably linked to two short dislocation legs of threading dislocations in the film.View full textDownload full textKeywordsdislocation, elastic field, thin-film silicon, transmission electron microscopyRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/09500839.2011.588612