On triple dislocation nodes observed by TEM in a Ge_(0.4)Si_(0.6) film grown on a slightly deviating (0 0 1)Si substrate

摘要

Specific misfit dislocation configurations are observed by two-beam dark-field transmission electron microscopy in a system formed by a Ge_(0.4)Si_(0.6) ultrathin film grown on a (001)Si surface tilted 6° around a (110) axis. An unusual interfacial feature is the presence of triple dislocation nodes linked to 'Y-centres' formed by the meeting of two near-60° dislocations and a slightly inclined edge misfit dislocation. It is shown, from the comparison of experimental and computer-aided images, requiring three-dimensional elastic fields of angular dislocations, that some Lomer misfit dislocation terminations are not simply the emerging points of a single dislocation, but very probably linked to two short dislocation legs of threading dislocations in the film.